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| F-40 01/99 NJ903 Process Silicon Junction Field-Effect Transistor Analog Switch Digital Switch Low-Noise Amplifier Absolute maximum ratings at TA = 25C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150C - 65C to +175C S-D G D-S Devices in this Databook based on the NJ903 Process. S-D Datasheet IFN5432 IFN5433 IFN5434 G Die Size = 0.040" X 0.040" All Bond Pads = 0.004" Sq. Substrate is also Gate. D-S At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Input Capacitance Feedback Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time rds(on) Ciss Ciss td(on) tr td(off) tf 5 45 22 7 1 12 2 pF pF ns ns ns ns V(BR)GSS IGSS IDSS VGS(OFF) 100 -2 Min - 25 Typ - 40 - 0.1 -1 900 -7 Max Unit V nA mA V NJ903 Process Test Conditions IG = - 1 A, VDS = OV VGS = - 15V, VDS = OV VDS = 10V, VGS = OV VDS = 10V, ID = 1 nA ID = 1 mA, VGS = O VDS = OV, VGS = - 10V VDS = OV, VGS = - 10V VDD = 1.5V, ID(ON) = 30 mA RL = 50 , VGS(ON) = OV VGS(OFF) = - 7V f = 1 kHz f = 1 MHz f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-41 NJ903 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = 4.2 V Typical Gate Leakage Current as a Function of Ambient Temperature - 100 500 VGS = O V Drain Current in mA 400 VGS = - 1 V 300 VGS = - 2 V 200 VGS = - 3 V 100 VGS = - 4 V Leakage Current in nA IGSS @ VGS = - 20 V VDS = O V - 10 -1 - 0.1 - 0.01 0 5 10 15 20 0 25 50 75 100 125 150 Drain to Source Voltage in Volts Temperature in C Drain Saturation Current as a Function of VGS(OFF) Drain Source (on) Resistance in Drain Saturation Current in mA 1000 800 600 400 200 10 8 6 4 2 RDS(ON) as a Function of VGS(OFF) 0 -2 -4 -6 -8 0 -2 -4 -6 -8 Gate Source Cutoff Voltage in Volts Gate Source Cutoff Voltage in Volts Input Capacitance as a Function of VGS 80 Input Capacitance in pF VDS = O V 60 VDS = 5 V VDS = 15 V 40 Feedback Capacitance in pF 40 Feedback Capacitance as a Function of VGS 30 VDS = O V VDS = 5 V VDS = 15 V 20 20 10 0 -5 - 10 - 15 - 20 -5 - 10 - 15 - 20 Gate Source Voltage in Volts Gate Source Voltage in Volts |
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